BAUTEIL:
SSP5N90 Power Field-Effect Transistors
Samsung (SAMSUNG SEMICONDUCTOR INC)
ComSIT hat 180 Stück SSP5N90 von Samsung (SAMSUNG SEMICONDUCTOR INC) auf Lager. Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Samsung · Alle Power Field-Effect Transistors
| STOCK | 180 |
| PARTNUMBER | SSP5N90 |
| MANUFACTURER | Samsung (SAMSUNG SEMICONDUCTOR INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | 0DUN9, 1542F |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 180 |
