BAUTEIL:
FQP2N60C Power Field-Effect Transistors
Onsemi
ComSIT hat 150 Stück FQP2N60C von Onsemi auf Lager. Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: EOL / Phase-Out. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 150 |
| PARTNUMBER | FQP2N60C |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 2.0 A, 600 V N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 23-Dec-2021 |
| PART STATUS | EOL |
| LIFECYCLESTAGE | Phase-Out |
| STOCK | 150 |
