BAUTEIL:
HGTG20N60B3D Insulated Gate Bipolar Transistors
Onsemi
HGTG20N60B3D von Onsemi ist bei ComSIT auf Anfrage erhältlich. Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Insulated Gate Bipolar Transistors
| PARTNUMBER | HGTG20N60B3D |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 40A, 600V, UFS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247 |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
