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HGTG20N60B3D Insulated Gate Bipolar Transistors
Onsemi
HGTG20N60B3D de Onsemi est disponible chez ComSIT sur demande. Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247. Cycle de vie : NRFND / Decline. Conforme RoHS. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Demandez un devis
Tous les composants Onsemi · Tous : Insulated Gate Bipolar Transistors
| PARTNUMBER | HGTG20N60B3D |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 40A, 600V, UFS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247 |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
