BAUTEIL:
FDP3632 Power Field-Effect Transistors
Onsemi
ComSIT hat 165 Stück FDP3632 von Onsemi auf Lager. Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: NRFND / Decline. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 165 |
| PARTNUMBER | FDP3632 |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | MOSFET-Power, N-Channel, POWERTRENCH |
| DESCRIPTION | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 165 |
