BAUTEIL:
NTMD4N03R2G Power Field-Effect Transistors
Onsemi
ComSIT hat 93 Stück NTMD4N03R2G von Onsemi auf Lager. Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 93 |
| PARTNUMBER | NTMD4N03R2G |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 30 VOLTS, 4 AMPS, N-CHANNEL SO-8 DUAL POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SOIC-8 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 93 |
