BAUTEIL:
IRF8910 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 70 Stück IRF8910 von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA. Lebenszyklus: Active / Mature. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 70 |
| PARTNUMBER | IRF8910 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | HEXFET POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
| MFR. PKG. DESC. | LEAD FREE, SO-8 |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 70 |
