BAUTEIL:
BUZ355 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 24 Stück BUZ355 von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 24 |
| PARTNUMBER | BUZ355 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL ENHANCEMENT IGBT TO-218 |
| DESCRIPTION | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 |
| LC CODE | 5.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 13-Jan-2006 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 24 |
