BAUTEIL:
PHN1013 Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT hat 22,450 Stück PHN1013 von NXP (NXP SEMICONDUCTORS) auf Lager. Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von NXP · Alle Power Field-Effect Transistors
| STOCK | 22450 |
| PARTNUMBER | PHN1013 |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | TRENCHMOS TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
| MFR. PKG. DESC. | PLASTIC, SO-8 |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 22450 |
