BAUTEIL:
VNB35N07-E / VNB35N07E Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT hat 169 Stück VNB35N07-E von ST Micro (STMICROELECTRONICS) auf Lager. Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: EOL / Phase-Out. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle Power Field-Effect Transistors
| STOCK | 169 |
| PARTNUMBER | VNB35N07-E |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | OMNIFET FULLY AUTOPROTECTED POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | D2PAK-3/2 |
| LC CODE | 4.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 09-Aug-2021 |
| PART STATUS | EOL |
| LIFECYCLESTAGE | Phase-Out |
| STOCK | 169 |
