BAUTEIL:
ZXMN10A11GTA Power Field-Effect Transistors
Diodes (DIODES INC)
ComSIT hat 926 Stück ZXMN10A11GTA von Diodes (DIODES INC) auf Lager. Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Diodes · Alle Power Field-Effect Transistors
| STOCK | 926 |
| PARTNUMBER | ZXMN10A11GTA |
| MANUFACTURER | Diodes (DIODES INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SOT-223, 4 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 12060,6M0U4 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 926 |
