BAUTEIL:
ZXMS6002GTA Power Field-Effect Transistors
Diodes (DIODES INC)
ZXMS6002GTA von Diodes (DIODES INC) ist bei ComSIT auf Anfrage erhältlich. Power Field-Effect Transistor, 1.6A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Diodes · Alle Power Field-Effect Transistors
| PARTNUMBER | ZXMS6002GTA |
| MANUFACTURER | Diodes (DIODES INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET WITH STATUS INDICATION |
| DESCRIPTION | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA |
| MFR. PKG. DESC. | SOT-223, 4 PIN |
| LC CODE | 5.00 |
| CAGE CODE | 12060,6M0U4 |
| ALERT DATE | 19-May-2022 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
