BAUTEIL:
IRF530N Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT hat 100 Stück IRF530N von NXP (NXP SEMICONDUCTORS) auf Lager. Power Field-Effect Transistor, 17A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von NXP · Alle Power Field-Effect Transistors
| STOCK | 100 |
| PARTNUMBER | IRF530N |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL TRENCHMOS TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 17A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | PLASTIC, TO-220AB, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| ALERT DATE | 31-Dec-2006 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 100 |
