BAUTEIL:
FQD7N10LTM Power Field-Effect Transistors
Onsemi
ComSIT hat 4,407 Stück FQD7N10LTM von Onsemi auf Lager. Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 4407 |
| PARTNUMBER | FQD7N10LTM |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 100V LOGIC N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
| MFR. PKG. DESC. | DPAK-3 |
| LC CODE | 5.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 30-Jun-2022 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 4407 |
