BAUTEIL:
IRF5801TRPBF Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 1,980 Stück IRF5801TRPBF von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 1980 |
| PARTNUMBER | IRF5801TRPBF |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | HEXFET SMPS POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA |
| MFR. PKG. DESC. | LEAD FREE, TSOP-6 |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 1980 |
