BAUTEIL:
TJ9A10M3 / TJ9A10M3S4QM Power Field-Effect Transistors
Toshiba (TOSHIBA CORP)
ComSIT hat 2,890 Stück TJ9A10M3 von Toshiba (TOSHIBA CORP) auf Lager. Power Field-Effect Transistor, 9A I(D), 100V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: EOL / Phase-Out. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Toshiba · Alle Power Field-Effect Transistors
| STOCK | 2890 |
| PARTNUMBER | TJ9A10M3 |
| MANUFACTURER | Toshiba (TOSHIBA CORP) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | P-CHANNEL SILICON MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 9A I(D), 100V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220SIS, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 61802 |
| PART STATUS | EOL |
| LIFECYCLESTAGE | Phase-Out |
| STOCK | 2890 |
