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IRFB3306GPBF Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT tiene 324 unidades de IRFB3306GPBF de Infineon (INFINEON TECHNOLOGIES AG) en stock. Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Ciclo de vida: NRFND / Decline. Conforme a RoHS. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Solicite una cotización
Todos los componentes de Infineon · Todos: Power Field-Effect Transistors
| STOCK | 324 |
| PARTNUMBER | IRFB3306GPBF |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | HEXFET Power MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| LC CODE | 4.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 04-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 324 |
