PARTE:
FQB5N90TM Power Field-Effect Transistors
Onsemi
FQB5N90TM de Onsemi está disponible en ComSIT bajo pedido. Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo de vida: Active / Mature. Conforme a RoHS. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Solicite una cotización
Todos los componentes de Onsemi · Todos: Power Field-Effect Transistors
| PARTNUMBER | FQB5N90TM |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 900 V N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
