Magnachip composants électroniques
ComSIT propose 61 références Magnachip (59 disponibles en stock) dans 4 catégories de produits. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Cliquez sur une référence pour les spécifications complètes, le statut du cycle de vie et une demande de devis.
Magnachip : composants par catégorie
Magnachip
| Référence | Catégorie | Description | STOCK |
|---|---|---|---|
| MDF5N50BTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 3,350 |
| MDF13N50BTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 3,000 |
| MDD14N25CRH | Power Field-Effect Transistors | Power Field-Effect Transistor, 10.2A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,454 |
| MDD2N60RH | Power Field-Effect Transistors | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,148 |
| MDD3N50GRH | Power Field-Effect Transistors | Power Field-Effect Transistor | 2,094 |
| MDD3N40RH | Power Field-Effect Transistors | Power Field-Effect Transistor | 1,929 |
| MDD5N50RH | Power Field-Effect Transistors | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| MDD5N40RH | Power Field-Effect Transistors | Power Field-Effect Transistor | 1,547 |
| MMF60R290PTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 850 |
| MDP15N60GTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 800 |
| MDF16N50GTH | Power Field-Effect Transistors | Power Field-Effect Transistor, 16A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| GMS90C32 | Microcontrollers | Microcontroller, 8-Bit, 12MHz, PDIP40 | 702 |
| MDP11N60TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 650 |
| MDP1933TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 650 |
| MMF60R750PTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 650 |
| MDP10N60GTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 600 |
| MMQ60R190PTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 360 |
| MDF3N50 | Power Field-Effect Transistors | Power Field-Effect Transistor | 300 |
| MDF18N50BTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 250 |
| GMS90C320PL40 | Microcontrollers | Microcontroller, 8-Bit, 8051 CPU, 40MHz, CMOS, PQCC44 | 235 |
| MDP1923TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 200 |
| MDP1932TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 130 |
| MPKC2SB150U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 70 |
| DH2F100N4SE | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 180A, 400V V(RRM), Silicon | 60 |
| DH2F150N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 60 |
| DH2F200N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 60 |
| MPKB2CB100U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 600V V(RRM), Silicon | 60 |
| DB2F150N6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 48 |
| MPKB2CA100U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 600V V(RRM), Silicon | 45 |
| DB2F200N6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 40 |
| MPKC2CA200U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 35 |
| MPMD200B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 32 |
| DA2F100N12S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon | 31 |
| DA2F100P12S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon | 31 |
| MPKB2SA100U120 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 1200V V(RRM), Silicon | 25 |
| MPKB2SB100U120 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 1200V V(RRM), Silicon | 25 |
| DB2F150N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 24 |
| DB2F150P6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 24 |
| DBC2F150N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 24 |
| DBC2F150P6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 24 |
| DBC2F200N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 24 |
| DBC2F200N6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 24 |
| DBC2F200P6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 24 |
| DM2G150SH6NE | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel | 24 |
| MPMB75B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel | 20 |
| MPMC150B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 20 |
| DAC2F100N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 400V V(RRM), Silicon | 18 |
| DM2G100SH12AE | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | 18 |
| DM1GL75SH12A | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel | 16 |
| MPKC2CA200U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 15 |
| DM2G200SH12AE | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel | 12 |
| MPKB2SA100U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 400V V(RRM), Silicon | 11 |
| MPKC2SA200U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 11 |
| MPKB2CA100U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 400V V(RRM), Silicon | 10 |
| MPMC100B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 10 |
| MPMC200B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 10 |
| DM2G300SH6N | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel | 8 |
| DM2G200SH12A | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel | 7 |
| MPKC2SA150U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 4 |
| MPJC2CA100U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 600V V(RRM), Silicon | on request |
| MPKB2CA150U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | on request |
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