Magnachip componentes electrónicos
ComSIT dispone de 61 números de parte de Magnachip (59 disponibles en stock) en 4 categorías de producto. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Haga clic en un número de parte para ver las especificaciones completas, el estado del ciclo de vida y solicitar una cotización.
Magnachip: componentes por categoría
Magnachip
| No. de Parte | Categoría | Descripción | Disponibilidad |
|---|---|---|---|
| MDF5N50BTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 3,350 |
| MDF13N50BTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 3,000 |
| MDD14N25CRH | Power Field-Effect Transistors | Power Field-Effect Transistor, 10.2A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,454 |
| MDD2N60RH | Power Field-Effect Transistors | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,148 |
| MDD3N50GRH | Power Field-Effect Transistors | Power Field-Effect Transistor | 2,094 |
| MDD3N40RH | Power Field-Effect Transistors | Power Field-Effect Transistor | 1,929 |
| MDD5N50RH | Power Field-Effect Transistors | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| MDD5N40RH | Power Field-Effect Transistors | Power Field-Effect Transistor | 1,547 |
| MMF60R290PTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 850 |
| MDP15N60GTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 800 |
| MDF16N50GTH | Power Field-Effect Transistors | Power Field-Effect Transistor, 16A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| GMS90C32 | Microcontrollers | Microcontroller, 8-Bit, 12MHz, PDIP40 | 702 |
| MDP11N60TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 650 |
| MDP1933TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 650 |
| MMF60R750PTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 650 |
| MDP10N60GTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 600 |
| MMQ60R190PTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 360 |
| MDF3N50 | Power Field-Effect Transistors | Power Field-Effect Transistor | 300 |
| MDF18N50BTH | Power Field-Effect Transistors | Power Field-Effect Transistor | 250 |
| GMS90C320PL40 | Microcontrollers | Microcontroller, 8-Bit, 8051 CPU, 40MHz, CMOS, PQCC44 | 235 |
| MDP1923TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 200 |
| MDP1932TH | Power Field-Effect Transistors | Power Field-Effect Transistor | 130 |
| MPKC2SB150U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 70 |
| DH2F100N4SE | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 180A, 400V V(RRM), Silicon | 60 |
| DH2F150N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 60 |
| DH2F200N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 60 |
| MPKB2CB100U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 600V V(RRM), Silicon | 60 |
| DB2F150N6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 48 |
| MPKB2CA100U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 600V V(RRM), Silicon | 45 |
| DB2F200N6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 40 |
| MPKC2CA200U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 35 |
| MPMD200B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 32 |
| DA2F100N12S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon | 31 |
| DA2F100P12S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 100A, 1200V V(RRM), Silicon | 31 |
| MPKB2SA100U120 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 1200V V(RRM), Silicon | 25 |
| MPKB2SB100U120 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 1200V V(RRM), Silicon | 25 |
| DB2F150N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 24 |
| DB2F150P6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 24 |
| DBC2F150N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 24 |
| DBC2F150P6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | 24 |
| DBC2F200N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 24 |
| DBC2F200N6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 24 |
| DBC2F200P6S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 24 |
| DM2G150SH6NE | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 175A I(C), 600V V(BR)CES, N-Channel | 24 |
| MPMB75B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel | 20 |
| MPMC150B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 20 |
| DAC2F100N4S | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 400V V(RRM), Silicon | 18 |
| DM2G100SH12AE | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel | 18 |
| DM1GL75SH12A | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel | 16 |
| MPKC2CA200U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 600V V(RRM), Silicon | 15 |
| DM2G200SH12AE | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel | 12 |
| MPKB2SA100U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 400V V(RRM), Silicon | 11 |
| MPKC2SA200U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 400A, 400V V(RRM), Silicon | 11 |
| MPKB2CA100U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 400V V(RRM), Silicon | 10 |
| MPMC100B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 10 |
| MPMC200B120RH | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor | 10 |
| DM2G300SH6N | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel | 8 |
| DM2G200SH12A | Insulated Gate Bipolar Transistors | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel | 7 |
| MPKC2SA150U40 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 400V V(RRM), Silicon | 4 |
| MPJC2CA100U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 200A, 600V V(RRM), Silicon | on request |
| MPKB2CA150U60 | Rectifier Diodes | Rectifier Diode, 1 Phase, 2 Element, 300A, 600V V(RRM), Silicon | on request |
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