RÉFÉRENCE :
PTFA043002EV1 RF Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
PTFA043002EV1 de Infineon (INFINEON TECHNOLOGIES AG) est disponible chez ComSIT sur demande. RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. Cycle de vie : Transferred / Discontinued-Transferred. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Demandez un devis
Tous les composants Infineon · Tous : RF Power Field-Effect Transistors
| PARTNUMBER | PTFA043002EV1 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | 300 WATT, 470-860 MHZ THERMALLY-ENHANCED HIGH POWER RF LDMOS FET |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | ROHS COMPLIANT, PACKAGE 30275, 4 PIN |
| LC CODE | 5.00 |
| CAGE CODE | C6489, 4KYR2 |
| PART STATUS | Transferred |
| LIFECYCLESTAGE | Discontinued-Transferred |
