RF Power Field-Effect Transistors composants électroniques en stock
ComSIT propose 44 références rf power field-effect transistors (32 disponibles en stock) de 13 fabricants. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Cliquez sur une référence pour les spécifications complètes, le statut du cycle de vie et une demande de devis.
Classification: Semiconductors > Transistors > RF Power Field-Effect Transistors
RF Power Field-Effect Transistors par fabricant
| Référence | Fabricant | Description | STOCK |
|---|---|---|---|
| NE5520379A-T1A | Renesas | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 13,000 |
| RD07MUS2B-T512 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,545 |
| MGF0904A-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 2,175 |
| RQA0010VXDQSTL-E | Renesas | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| BLF2047L/90 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,380 |
| PD57070S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,139 |
| MGF0905A-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 816 |
| MGF0906B | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | 525 |
| BLM6G22-30G | Ampleon | RF Power Field-Effect Transistor | 200 |
| PD20010-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 148 |
| D2205UK | TT Electronics | RF Power Field-Effect Transistor | 143 |
| D2022UK | TT Electronics | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 108 |
| MRF21125 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 58 |
| PD55015S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 50 |
| MGF0906B-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 40 |
| MRF21030 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 25 |
| PTFA241301E | Wolfspeed | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 24 |
| MRF21045LSR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 23 |
| MRF5S21090L | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 23 |
| DE375-501N21A | IXYS | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 20 |
| MRF184 | Freescale | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 20 |
| MGFC36V5258-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | 15 |
| MRF6S18140HSR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 15 |
| BLF6G22-45 | NXP | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 12 |
| SD4933 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 10 |
| SD2903 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 8 |
| BLF542,112 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 7 |
| TIM5359-35SL | Toshiba | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Junction FET | 5 |
| MGFC36V5258-51 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | 4 |
| TIM5359-16SL | Toshiba | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | 4 |
| PD57060S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3 |
| BLF1043 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1 |
| A2T09VD250NR1 | NXP | RF Power Field-Effect Transistor | on request |
| DE150-101N09A | IXYS | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| FLL800IQ-2C | Sumitomo | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | on request |
| MGF0904A | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | on request |
| MGF0913A-03 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | on request |
| MRF21085 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| MRF5S21100HR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| MW6S010GNR1 | NXP | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA | on request |
| PD55008 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PD55025S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PD55035-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PTFA043002EV1 | Infineon | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
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