ARTICOLO:
RD07MUS2B-T512 / RD07MUS2BT512J RF Power Field-Effect Transistors
Mitsubishi (MITSUBISHI ELECTRIC CORP)
ComSIT ha 2,545 pezzi di RD07MUS2B-T512 di Mitsubishi (MITSUBISHI ELECTRIC CORP) a magazzino. RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Mitsubishi · Tutti: RF Power Field-Effect Transistors
| STOCK | 2545 |
| PARTNUMBER | RD07MUS2B-T512 |
| MANUFACTURER | Mitsubishi (MITSUBISHI ELECTRIC CORP) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | SILICON RF POWER MOS FET |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| LC CODE | 3.00 |
| CAGE CODE | J4314 |
| ALERT DATE | 08-Sep-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 2545 |
