RF Power Field-Effect Transistors componenti elettronici a magazzino
ComSIT dispone di 44 codici articolo rf power field-effect transistors (32 disponibili a magazzino) di 13 produttori. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Clicca su un codice articolo per le specifiche complete, lo stato del ciclo di vita e una richiesta di offerta.
Classification: Semiconductors > Transistors > RF Power Field-Effect Transistors
RF Power Field-Effect Transistors per produttore
| Articoli | Marca | Descrizione | STOCK |
|---|---|---|---|
| NE5520379A-T1A | Renesas | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 13,000 |
| RD07MUS2B-T512 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,545 |
| MGF0904A-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 2,175 |
| RQA0010VXDQSTL-E | Renesas | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| BLF2047L/90 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,380 |
| PD57070S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,139 |
| MGF0905A-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 816 |
| MGF0906B | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | 525 |
| BLM6G22-30G | Ampleon | RF Power Field-Effect Transistor | 200 |
| PD20010-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 148 |
| D2205UK | TT Electronics | RF Power Field-Effect Transistor | 143 |
| D2022UK | TT Electronics | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 108 |
| MRF21125 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 58 |
| PD55015S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 50 |
| MGF0906B-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 40 |
| MRF21030 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 25 |
| PTFA241301E | Wolfspeed | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 24 |
| MRF21045LSR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 23 |
| MRF5S21090L | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 23 |
| DE375-501N21A | IXYS | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 20 |
| MRF184 | Freescale | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 20 |
| MGFC36V5258-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | 15 |
| MRF6S18140HSR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 15 |
| BLF6G22-45 | NXP | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 12 |
| SD4933 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 10 |
| SD2903 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 8 |
| BLF542,112 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 7 |
| TIM5359-35SL | Toshiba | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Junction FET | 5 |
| MGFC36V5258-51 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | 4 |
| TIM5359-16SL | Toshiba | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | 4 |
| PD57060S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3 |
| BLF1043 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1 |
| A2T09VD250NR1 | NXP | RF Power Field-Effect Transistor | on request |
| DE150-101N09A | IXYS | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| FLL800IQ-2C | Sumitomo | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | on request |
| MGF0904A | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | on request |
| MGF0913A-03 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | on request |
| MRF21085 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| MRF5S21100HR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| MW6S010GNR1 | NXP | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA | on request |
| PD55008 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PD55025S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PD55035-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PTFA043002EV1 | Infineon | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
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