ARTICOLO:
IRFB812PBF Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT ha 2,100 pezzi di IRFB812PBF di Infineon (INFINEON TECHNOLOGIES AG) a magazzino. Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Ciclo di vita: Discontinued / Discontinued. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| STOCK | 2100 |
| PARTNUMBER | IRFB812PBF |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | HEXFET POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| LC CODE | 5.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 11-Mar-2021 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 2100 |
