BAUTEIL:
IRFB812PBF Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 2,100 Stück IRFB812PBF von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 2100 |
| PARTNUMBER | IRFB812PBF |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | HEXFET POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| LC CODE | 5.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 11-Mar-2021 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 2100 |
