ARTICOLO:
FDB3652 Power Field-Effect Transistors
Onsemi
ComSIT ha 375 pezzi di FDB3652 di Onsemi a magazzino. Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo di vita: NRFND / Decline. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Power Field-Effect Transistors
| STOCK | 375 |
| PARTNUMBER | FDB3652 |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 100 V, 61 A, 16 MILLI OHM N-CHANNEL POWERTRENCH MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263AB, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 375 |
