料号：
FDB3652 Power Field-Effect Transistors
Onsemi
ComSIT 现有 Onsemi 的 FDB3652 375 件库存。 Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. 生命周期：NRFND / Decline。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
Onsemi 全部元器件 · 全部 Power Field-Effect Transistors
| 库存 | 375 |
| PARTNUMBER | FDB3652 |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 100 V, 61 A, 16 MILLI OHM N-CHANNEL POWERTRENCH MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263AB, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| 库存 | 375 |
