ARTICOLO:
BSC252N10NSFG Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
BSC252N10NSFG di Infineon (INFINEON TECHNOLOGIES AG) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| PARTNUMBER | BSC252N10NSFG |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | OPTIMOS 2 POWER-TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | GREEN, PLASTIC, TDSON-8 |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
