ARTICOLO:
PHB11N06LT Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT ha 32,000 pezzi di PHB11N06LT di NXP (NXP SEMICONDUCTORS) a magazzino. Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Ciclo di vita: Discontinued / Discontinued. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti NXP · Tutti: Power Field-Effect Transistors
| STOCK | 32000 |
| PARTNUMBER | PHB11N06LT |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL TRENCHMOS LOGIC LEVEL FET |
| DESCRIPTION | Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | PLASTIC, D2PAK-3 |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 32000 |
