料号：
PHB11N06LT Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT 现有 NXP (NXP SEMICONDUCTORS) 的 PHB11N06LT 32,000 件库存。 Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. 生命周期：Discontinued / Discontinued。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
NXP 全部元器件 · 全部 Power Field-Effect Transistors
| 库存 | 32000 |
| PARTNUMBER | PHB11N06LT |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL TRENCHMOS LOGIC LEVEL FET |
| DESCRIPTION | Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | PLASTIC, D2PAK-3 |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| 库存 | 32000 |
