ARTICOLO:
IRF250 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
IRF250 di Infineon (INFINEON TECHNOLOGIES AG) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE. Ciclo di vita: Active / Mature. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| PARTNUMBER | IRF250 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 200V, N-CHANNEL REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE |
| MFR. PKG. DESC. | HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
