料号：
IRF250 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
Infineon (INFINEON TECHNOLOGIES AG) 的 IRF250 可向 ComSIT 询购。 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE. 生命周期：Active / Mature。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
Infineon 全部元器件 · 全部 Power Field-Effect Transistors
| PARTNUMBER | IRF250 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 200V, N-CHANNEL REPETITIVE AVALANCHE AND DV/DT RATED HEXFET TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE |
| MFR. PKG. DESC. | HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
