PART:
MW6S010GNR1 RF Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
MW6S010GNR1 from NXP (NXP SEMICONDUCTORS) is available from ComSIT on request. RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA. Lifecycle: EOL / Phase-Out. RoHS compliant. Original certified parts, best price, fast worldwide delivery. Request a quote
All NXP parts · All RF Power Field-Effect Transistors
| PARTNUMBER | MW6S010GNR1 |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET RF POWER FIELD EFFECT TRANSISTOR |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA |
| MFR. PKG. DESC. | ROHS COMPLIANT, PLASTIC, CASE 1265A-03, 2 PIN |
| LC CODE | 4.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| ALERT DATE | 31-Mar-2026 |
| PART STATUS | EOL |
| LIFECYCLESTAGE | Phase-Out |
