PEÇA:
FQB4N80TM Power Field-Effect Transistors
Onsemi
A ComSIT tem 800 unidades de FQB4N80TM da Onsemi em stock. Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo de vida: Active / Mature. Conforme RoHS. Peças originais e certificadas, melhor preço, entrega rápida em todo o mundo. Peça uma cotação
Todas as peças Onsemi · Todos: Power Field-Effect Transistors
| STOCK | 800 |
| PARTNUMBER | FQB4N80TM |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 800V N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 800 |
