料号：
SCT10N120 Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ST Micro (STMICROELECTRONICS) 的 SCT10N120 可向 ComSIT 询购。 Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET. 生命周期：Active / Mature。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
ST Micro 全部元器件 · 全部 Power Field-Effect Transistors
| PARTNUMBER | SCT10N120 |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | SILICON CARBIDE POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET |
| LC CODE | 3.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
