料号：
STLD200N4F6AG Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT 现有 ST Micro (STMICROELECTRONICS) 的 STLD200N4F6AG 2,500 件库存。 Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. 生命周期：NRFND / Decline。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
ST Micro 全部元器件 · 全部 Power Field-Effect Transistors
| 库存 | 2500 |
| PARTNUMBER | STLD200N4F6AG |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | AUTOMOTIVE N-CHANNEL 40 V, 1.27 MILLI OHM TYP, 120 A STRIPFET MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING |
| DESCRIPTION | Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| LC CODE | 4.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 08-Aug-2023 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| 库存 | 2500 |
