BAUTEIL:
STLD200N4F6AG Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT hat 2,500 Stück STLD200N4F6AG von ST Micro (STMICROELECTRONICS) auf Lager. Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle Power Field-Effect Transistors
| STOCK | 2500 |
| PARTNUMBER | STLD200N4F6AG |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | AUTOMOTIVE N-CHANNEL 40 V, 1.27 MILLI OHM TYP, 120 A STRIPFET MOSFET IN A POWERFLAT 5X6 DUAL SIDE COOLING |
| DESCRIPTION | Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| LC CODE | 4.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 08-Aug-2023 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 2500 |
