RF Small Signal Field-Effect Transistors electronic components in stock
ComSIT stocks 48 rf small signal field-effect transistors part numbers (39 available from stock) from 21 manufacturers. Original certified parts, best price, fast worldwide delivery. Click a part number for full specifications, lifecycle status and a quote request.
Classification: Semiconductors > Transistors > RF Small Signal Field-Effect Transistors
RF Small Signal Field-Effect Transistors by manufacturer
| PART No. | MANUFACTURER | Description | STOCK |
|---|---|---|---|
| FHX76LP | Sumitomo | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 326,999 |
| BF991 | Philips Comp | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET | 30,000 |
| ATF-55143-TR1G | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET | 24,000 |
| MGF4918D-01 | Mitsubishi | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 19,950 |
| BF245A | Baneasa S A | RF Small Signal Field-Effect Transistor, 1-Element, Silicon | 19,700 |
| CLY2E6327 | Qorvo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | 16,900 |
| S886TR-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 9,000 |
| NE38018-T1 | NEC Semi | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET | 6,341 |
| MMBF5485 | Onsemi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| MMBF5486 | Onsemi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| 2SK2497 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | 5,000 |
| S593TRW | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 4,260 |
| NE425S01-T1B | NEC | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | 4,000 |
| CF750E6327 | Qorvo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, P-Channel, Junction FET | 3,930 |
| BLM8G0710S-30PBG | Ampleon | RF Small Signal Field-Effect Transistor | 3,671 |
| BF1201WR | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3,220 |
| CFY75-13 | Infineon | RF Small Signal Field-Effect Transistor, N-Channel | 3,000 |
| MMBF5485 | Fairchild Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| NE3503M04-T2-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | 3,000 |
| 3SK126-O | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,315 |
| S592TRW | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,281 |
| NE3514S02-T1C-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET | 2,000 |
| S595T-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| 2SK3475TE12LF | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,995 |
| P0120008P | Sumitomo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 1,920 |
| 3SK195 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,305 |
| 3SK295ZQ-TL | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,220 |
| BF511 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET | 1,115 |
| S592TR | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,004 |
| ATF-36163-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 1,000 |
| S982TR | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| BFW11 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72 | 825 |
| ATF-35143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET | 700 |
| 2N3819 | Fairchild Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | 672 |
| SHF-0189 | RF Micro | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Hetero-junction FET | 660 |
| SST5486 | Siliconix | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | 600 |
| ATF-13336-TR1 | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET | 542 |
| BF996SA-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 109 |
| ATF-55143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET | 100 |
| ATF-33143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 63 |
| 2SK3475 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF1107 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF545A | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | on request |
| BF904 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF998 | NXP | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| CMPF5486TR | Central Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET | on request |
| NE3508M04-T2-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | on request |
| PMBFJ308 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | on request |
| U310 | Linear Systems | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-18 | on request |
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