RF Small Signal Field-Effect Transistors Elektronische Bauteile ab Lager
ComSIT führt 48 Teilenummern der Kategorie rf small signal field-effect transistors (39 ab Lager verfügbar) von 21 Herstellern. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Klicken Sie auf eine Teilenummer für alle Spezifikationen, den Lebenszyklusstatus und eine Angebotsanfrage.
Classification: Semiconductors > Transistors > RF Small Signal Field-Effect Transistors
RF Small Signal Field-Effect Transistors nach Hersteller
| Teilenummer | Hersteller | Beschreibung | Bestand |
|---|---|---|---|
| FHX76LP | Sumitomo | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 326,999 |
| BF991 | Philips Comp | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET | 30,000 |
| ATF-55143-TR1G | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET | 24,000 |
| MGF4918D-01 | Mitsubishi | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 19,950 |
| BF245A | Baneasa S A | RF Small Signal Field-Effect Transistor, 1-Element, Silicon | 19,700 |
| CLY2E6327 | Qorvo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | 16,900 |
| S886TR-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 9,000 |
| NE38018-T1 | NEC Semi | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET | 6,341 |
| MMBF5485 | Onsemi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| MMBF5486 | Onsemi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| 2SK2497 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | 5,000 |
| S593TRW | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 4,260 |
| NE425S01-T1B | NEC | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | 4,000 |
| CF750E6327 | Qorvo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, P-Channel, Junction FET | 3,930 |
| BLM8G0710S-30PBG | Ampleon | RF Small Signal Field-Effect Transistor | 3,671 |
| BF1201WR | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3,220 |
| CFY75-13 | Infineon | RF Small Signal Field-Effect Transistor, N-Channel | 3,000 |
| MMBF5485 | Fairchild Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| NE3503M04-T2-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | 3,000 |
| 3SK126-O | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,315 |
| S592TRW | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,281 |
| NE3514S02-T1C-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET | 2,000 |
| S595T-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| 2SK3475TE12LF | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,995 |
| P0120008P | Sumitomo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 1,920 |
| 3SK195 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,305 |
| 3SK295ZQ-TL | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,220 |
| BF511 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET | 1,115 |
| S592TR | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,004 |
| ATF-36163-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 1,000 |
| S982TR | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| BFW11 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72 | 825 |
| ATF-35143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET | 700 |
| 2N3819 | Fairchild Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | 672 |
| SHF-0189 | RF Micro | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Hetero-junction FET | 660 |
| SST5486 | Siliconix | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | 600 |
| ATF-13336-TR1 | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET | 542 |
| BF996SA-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 109 |
| ATF-55143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET | 100 |
| ATF-33143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 63 |
| 2SK3475 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF1107 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF545A | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | on request |
| BF904 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF998 | NXP | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| CMPF5486TR | Central Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET | on request |
| NE3508M04-T2-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | on request |
| PMBFJ308 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | on request |
| U310 | Linear Systems | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-18 | on request |
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