RF Small Signal Field-Effect Transistors composants électroniques en stock
ComSIT propose 48 références rf small signal field-effect transistors (39 disponibles en stock) de 21 fabricants. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Cliquez sur une référence pour les spécifications complètes, le statut du cycle de vie et une demande de devis.
Classification: Semiconductors > Transistors > RF Small Signal Field-Effect Transistors
RF Small Signal Field-Effect Transistors par fabricant
| Référence | Fabricant | Description | STOCK |
|---|---|---|---|
| FHX76LP | Sumitomo | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 326,999 |
| BF991 | Philips Comp | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET | 30,000 |
| ATF-55143-TR1G | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET | 24,000 |
| MGF4918D-01 | Mitsubishi | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 19,950 |
| BF245A | Baneasa S A | RF Small Signal Field-Effect Transistor, 1-Element, Silicon | 19,700 |
| CLY2E6327 | Qorvo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | 16,900 |
| S886TR-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 9,000 |
| NE38018-T1 | NEC Semi | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET | 6,341 |
| MMBF5485 | Onsemi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| MMBF5486 | Onsemi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| 2SK2497 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | 5,000 |
| S593TRW | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 4,260 |
| NE425S01-T1B | NEC | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | 4,000 |
| CF750E6327 | Qorvo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, P-Channel, Junction FET | 3,930 |
| BLM8G0710S-30PBG | Ampleon | RF Small Signal Field-Effect Transistor | 3,671 |
| BF1201WR | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3,220 |
| CFY75-13 | Infineon | RF Small Signal Field-Effect Transistor, N-Channel | 3,000 |
| MMBF5485 | Fairchild Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| NE3503M04-T2-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET | 3,000 |
| 3SK126-O | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,315 |
| S592TRW | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,281 |
| NE3514S02-T1C-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET | 2,000 |
| S595T-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| 2SK3475TE12LF | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,995 |
| P0120008P | Sumitomo | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 1,920 |
| 3SK195 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,305 |
| 3SK295ZQ-TL | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,220 |
| BF511 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET | 1,115 |
| S592TR | Vishay | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,004 |
| ATF-36163-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 1,000 |
| S982TR | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| BFW11 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-72 | 825 |
| ATF-35143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, High Electron Mobility FET | 700 |
| 2N3819 | Fairchild Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-92 | 672 |
| SHF-0189 | RF Micro | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Hetero-junction FET | 660 |
| SST5486 | Siliconix | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | 600 |
| ATF-13336-TR1 | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET | 542 |
| BF996SA-GS08 | Telefunken | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 109 |
| ATF-55143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET | 100 |
| ATF-33143-BLKG | Broadcom Ltd | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET | 63 |
| 2SK3475 | Toshiba | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF1107 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF545A | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | on request |
| BF904 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF998 | NXP | RF Small Signal Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| CMPF5486TR | Central Semi | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET | on request |
| NE3508M04-T2-A | Renesas | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Hetero-junction FET | on request |
| PMBFJ308 | NXP | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-236AB | on request |
| U310 | Linear Systems | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-18 | on request |
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