BAUTEIL:
MGF0906B RF Power Field-Effect Transistors
Mitsubishi (MITSUBISHI ELECTRIC CORP)
ComSIT hat 525 Stück MGF0906B von Mitsubishi (MITSUBISHI ELECTRIC CORP) auf Lager. RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Mitsubishi · Alle RF Power Field-Effect Transistors
| STOCK | 525 |
| PARTNUMBER | MGF0906B |
| MANUFACTURER | Mitsubishi (MITSUBISHI ELECTRIC CORP) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | L, S BAND POWER GAAS FET |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET |
| MFR. PKG. DESC. | HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN |
| LC CODE | 5.00 |
| CAGE CODE | J4314 |
| ALERT DATE | 28-Dec-2015 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 525 |
