RF Power Field-Effect Transistors Elektronische Bauteile ab Lager
ComSIT führt 44 Teilenummern der Kategorie rf power field-effect transistors (32 ab Lager verfügbar) von 13 Herstellern. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Klicken Sie auf eine Teilenummer für alle Spezifikationen, den Lebenszyklusstatus und eine Angebotsanfrage.
Classification: Semiconductors > Transistors > RF Power Field-Effect Transistors
RF Power Field-Effect Transistors nach Hersteller
| Teilenummer | Hersteller | Beschreibung | Bestand |
|---|---|---|---|
| NE5520379A-T1A | Renesas | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 13,000 |
| RD07MUS2B-T512 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,545 |
| MGF0904A-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 2,175 |
| RQA0010VXDQSTL-E | Renesas | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| BLF2047L/90 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,380 |
| PD57070S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1,139 |
| MGF0905A-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 816 |
| MGF0906B | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | 525 |
| BLM6G22-30G | Ampleon | RF Power Field-Effect Transistor | 200 |
| PD20010-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 148 |
| D2205UK | TT Electronics | RF Power Field-Effect Transistor | 143 |
| D2022UK | TT Electronics | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 108 |
| MRF21125 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 58 |
| PD55015S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 50 |
| MGF0906B-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | 40 |
| MRF21030 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 25 |
| PTFA241301E | Wolfspeed | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 24 |
| MRF21045LSR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 23 |
| MRF5S21090L | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 23 |
| DE375-501N21A | IXYS | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 20 |
| MRF184 | Freescale | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 20 |
| MGFC36V5258-01 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | 15 |
| MRF6S18140HSR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 15 |
| BLF6G22-45 | NXP | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 12 |
| SD4933 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 10 |
| SD2903 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 8 |
| BLF542,112 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 7 |
| TIM5359-35SL | Toshiba | RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, Junction FET | 5 |
| MGFC36V5258-51 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET | 4 |
| TIM5359-16SL | Toshiba | RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | 4 |
| PD57060S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 3 |
| BLF1043 | NXP | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | 1 |
| A2T09VD250NR1 | NXP | RF Power Field-Effect Transistor | on request |
| DE150-101N09A | IXYS | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| FLL800IQ-2C | Sumitomo | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | on request |
| MGF0904A | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET | on request |
| MGF0913A-03 | Mitsubishi | RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET | on request |
| MRF21085 | Motorola | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| MRF5S21100HR3 | Freescale | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| MW6S010GNR1 | NXP | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270BA | on request |
| PD55008 | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PD55025S-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PD55035-E | ST Micro | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
| PTFA043002EV1 | Infineon | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET | on request |
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