BAUTEIL:
NE5520379A-T1A / NE5520379AT1A RF Power Field-Effect Transistors
Renesas (RENESAS ELECTRONICS CORP)
ComSIT hat 13,000 Stück NE5520379A-T1A von Renesas (RENESAS ELECTRONICS CORP) auf Lager. RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Renesas · Alle RF Power Field-Effect Transistors
| STOCK | 13000 |
| PARTNUMBER | NE5520379A-T1A |
| MANUFACTURER | Renesas (RENESAS ELECTRONICS CORP) |
| TYPE | Transistors |
| CATEGORY | RF Power Field-Effect Transistors (Semiconductors > Transistors > RF Power Field-Effect Transistors) |
| MFR. DESC | 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS |
| DESCRIPTION | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | 79A, 4 PIN |
| LC CODE | 5.00 |
| CAGE CODE | 6LTM0, 34371, 8QEK4, 4MHN3 |
| ALERT DATE | 30-Aug-2013 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 13000 |
