BAUTEIL:
HGTG10N120BND Insulated Gate Bipolar Transistors
Onsemi
HGTG10N120BND von Onsemi ist bei ComSIT auf Anfrage erhältlich. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Insulated Gate Bipolar Transistors
| PARTNUMBER | HGTG10N120BND |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 35 A, 1200 V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 03-Dec-2021 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
