PART:
HGTG10N120BND Insulated Gate Bipolar Transistors
Onsemi
HGTG10N120BND from Onsemi is available from ComSIT on request. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247. Lifecycle: NRFND / Decline. RoHS compliant. Original certified parts, best price, fast worldwide delivery. Request a quote
All Onsemi parts · All Insulated Gate Bipolar Transistors
| PARTNUMBER | HGTG10N120BND |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 35 A, 1200 V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 03-Dec-2021 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
