ARTICOLO:
HGTG10N120BND Insulated Gate Bipolar Transistors
Onsemi
HGTG10N120BND di Onsemi è disponibile presso ComSIT su richiesta. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247. Ciclo di vita: NRFND / Decline. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Insulated Gate Bipolar Transistors
| PARTNUMBER | HGTG10N120BND |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 35 A, 1200 V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-247 |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 03-Dec-2021 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
