BAUTEIL:
HGTP10N120BN / MGTP10N120BN Insulated Gate Bipolar Transistors
Onsemi
ComSIT hat 5 Stück HGTP10N120BN von Onsemi auf Lager. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Insulated Gate Bipolar Transistors
| STOCK | 5 |
| PARTNUMBER | HGTP10N120BN |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 35A, 1200V, NPT SERIES N-CHANNEL IGBT |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB |
| MFR. PKG. DESC. | ALTERNATE VERSION, TO-220AB, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 5 |
