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HGTP10N120BN / MGTP10N120BN Insulated Gate Bipolar Transistors
Onsemi
ComSIT tiene 5 unidades de HGTP10N120BN de Onsemi en stock. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB. Ciclo de vida: NRFND / Decline. Conforme a RoHS. Componentes originales y certificados, mejor precio, envío rápido a todo el mundo. Solicite una cotización
Todos los componentes de Onsemi · Todos: Insulated Gate Bipolar Transistors
| STOCK | 5 |
| PARTNUMBER | HGTP10N120BN |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 35A, 1200V, NPT SERIES N-CHANNEL IGBT |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB |
| MFR. PKG. DESC. | ALTERNATE VERSION, TO-220AB, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 5 |
