ARTICOLO:
HGTP10N120BN / MGTP10N120BN Insulated Gate Bipolar Transistors
Onsemi
ComSIT ha 5 pezzi di HGTP10N120BN di Onsemi a magazzino. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB. Ciclo di vita: NRFND / Decline. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Insulated Gate Bipolar Transistors
| STOCK | 5 |
| PARTNUMBER | HGTP10N120BN |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 35A, 1200V, NPT SERIES N-CHANNEL IGBT |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-220AB |
| MFR. PKG. DESC. | ALTERNATE VERSION, TO-220AB, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 10-Jan-2022 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 5 |
